STGW40H65DFB
ActiveTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
STGW40H65DFB
ActiveTRENCH GATE FIELD-STOP 650 V, 40 A HIGH SPEED HB SERIES IGBT
Description
General part information
STGW40H65DFB Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW40H65DFB |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Gate Charge | 210 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power - Max | 283 W |
| Reverse Recovery Time (trr) | 62 ns |
| Switching Energy (Off) | 363 µJ |
| Switching Energy (On) | 498 µJ |
| Td (off) @ 25°C | 142 ns |
| Td (on) @ 25°C | 40 ns |
| Test Condition Current | 40 A |
| Test Condition Resistance | 5 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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