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BUL1102E - TO-220-3

BUL1102E

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 2 A, 70 W, TO-220, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheetDS2300+3
BUL1102E - TO-220-3

BUL1102E

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 2 A, 70 W, TO-220, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheetDS2300+3

Technical Specifications

Parameters and characteristics for this part

SpecificationBUL1102E
Current - Collector (Ic) (Max) [Max]4 A
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]12
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]70 W
Supplier Device PackageTO-220
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)450 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 1.16
100$ 0.92
250$ 0.91
500$ 0.78
1250$ 0.64
2500$ 0.60
5000$ 0.57
NewarkEach 1$ 2.27
10$ 1.29
100$ 1.22
500$ 1.08
1000$ 0.97
3000$ 0.91
10000$ 0.86

Description

General part information

BUL1102E Series

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.