
6A08-G
ActiveComchip Technology
DIODE GEN PURP 800V 6A R-6
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6A08-G
ActiveComchip Technology
DIODE GEN PURP 800V 6A R-6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
Specification | 6A08-G |
---|---|
Capacitance @ Vr, F | 100 pF |
Current - Average Rectified (Io) | 6 A |
Current - Reverse Leakage @ Vr | 10 µA |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 125 °C |
Operating Temperature - Junction [Min] | -55 °C |
Package / Case | R-6, Axial |
Speed | Standard Recovery >500ns |
Speed | 200 mA |
Supplier Device Package | R-6 |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Tape & Box (TB) | 1000 | $ 0.23 | |
2500 | $ 0.20 | |||
5000 | $ 0.19 | |||
12500 | $ 0.18 | |||
25000 | $ 0.17 | |||
50000 | $ 0.17 |
6A08 Series
DIODE GEN PURP 800V 6A R-6
Part | Current - Average Rectified (Io) | Technology | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Speed | Speed |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 6A08-G | 6 A | Standard | 100 pF | 10 µA | R-6 | -55 °C | 125 °C | R-6, Axial | Through Hole | 800 V | 1 V | Standard Recovery >500ns | 200 mA |
Description
General part information
6A08 Series
Diode 800 V 6A Through Hole R-6
Documents
Technical documentation and resources
No documents available