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6A08-G - R6, Axial

6A08-G

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Comchip Technology

DIODE GEN PURP 800V 6A R-6

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6A08-G - R6, Axial

6A08-G

Active
Comchip Technology

DIODE GEN PURP 800V 6A R-6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification6A08-G
Capacitance @ Vr, F100 pF
Current - Average Rectified (Io)6 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseR-6, Axial
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageR-6
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Box (TB) 1000$ 0.23
2500$ 0.20
5000$ 0.19
12500$ 0.18
25000$ 0.17
50000$ 0.17

6A08 Series

DIODE GEN PURP 800V 6A R-6

PartCurrent - Average Rectified (Io)TechnologyCapacitance @ Vr, FCurrent - Reverse Leakage @ VrSupplier Device PackageOperating Temperature - Junction [Min]Operating Temperature - Junction [Max]Package / CaseMounting TypeVoltage - DC Reverse (Vr) (Max) [Max]Voltage - Forward (Vf) (Max) @ IfSpeedSpeed
Comchip Technology
6A08-G
6 A
Standard
100 pF
10 µA
R-6
-55 °C
125 °C
R-6, Axial
Through Hole
800 V
1 V
Standard Recovery >500ns
200 mA

Description

General part information

6A08 Series

Diode 800 V 6A Through Hole R-6

Documents

Technical documentation and resources

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