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STLD125N4F6AG - 8 Power WDFN

STLD125N4F6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V, 2.4 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE

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STLD125N4F6AG - 8 Power WDFN

STLD125N4F6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 40 V, 2.4 MOHM TYP., 120 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTLD125N4F6AG
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]91 nC
Input Capacitance (Ciss) (Max) @ Vds5600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)130 W
Rds On (Max) @ Id, Vgs [Max]3 mOhm
Supplier Device PackagePowerFlat™ (5x6) Dual Side
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.72
10$ 2.28
100$ 1.85
500$ 1.64
1000$ 1.40
Digi-Reel® 1$ 2.72
10$ 2.28
100$ 1.85
500$ 1.64
1000$ 1.40
Tape & Reel (TR) 2500$ 1.27

Description

General part information

STLD125N4F6AG Series

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.