W66CQ2NQQAHJ
ActiveWinbond Electronics
IC DRAM 4GBIT LVSTL 200TFBGA
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W66CQ2NQQAHJ
ActiveWinbond Electronics
IC DRAM 4GBIT LVSTL 200TFBGA
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | W66CQ2NQQAHJ | W66CQ2 Series |
|---|---|---|
| - | - | |
| Access Time | 3.6 ns | 3.6 ns |
| Clock Frequency | 2.133 GHz | 1.6 - 1866 MHz |
| Memory Format | DRAM | DRAM |
| Memory Organization | 128 M | 128 M |
| Memory Size | 512 kb | 512 kb |
| Memory Type | Volatile | Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 105 °C | 105 °C |
| Operating Temperature [Min] | -40 °C | -40 °C |
| Package / Case | 200-TFBGA | 200-WFBGA, 200-TFBGA |
| Supplier Device Package | 200-TFBGA | 200-WFBGA (10x14.5), 200-TFBGA |
| Supplier Device Package [x] | 10 | 10 |
| Supplier Device Package [y] | 14.5 | 14.5 |
| Technology | SDRAM - Mobile LPDDR4X | SDRAM - Mobile LPDDR4X |
| Voltage - Supply [Max] | 1.95 V, 1.17 V | 1.17 - 1.95 V |
| Voltage - Supply [Min] | 1.06 V, 1.7 V | 1.06 - 1.7 V |
| Write Cycle Time - Word, Page | 18 ns | 18 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 144 | $ 4.70 | |
W66CQ2 Series
DRAM CHIP MOBILE LPDDR4X SDRAM 4GBIT 128MX32 1.1V/1.8V 200-PIN WFBGA
| Part | Voltage - Supply [Min] | Voltage - Supply [Max] | Memory Size | Package / Case | Memory Organization | Write Cycle Time - Word, Page | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Memory Type | Clock Frequency | Mounting Type | Technology | Memory Format | Access Time | Supplier Device Package [y] | Supplier Device Package [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W66CQ2NQUAGJ | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1866 MHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics W66CQ2NQUAFJ TR | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1.6 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics W66CQ2NQUAFJ | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | ||||
Winbond Electronics W66CQ2NQUAGJ | |||||||||||||||||
Winbond Electronics W66CQ2NQUAHJ TR | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics W66CQ2NQQAHJ | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-TFBGA | 128 M | 18 ns | 200-TFBGA | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | 3.6 ns | 14.5 | 10 |
Winbond Electronics W66CQ2NQUAHJ | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 2.133 GHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM | |||
Winbond Electronics W66CQ2NQUAGJ TR | 1.06 V, 1.7 V | 1.17 V, 1.95 V | 512 kb | 200-WFBGA | 128 M | 18 ns | 200-WFBGA (10x14.5) | 105 °C | -40 °C | Volatile | 1866 MHz | Surface Mount | SDRAM - Mobile LPDDR4X | DRAM |
Description
General part information
W66CQ2 Series
SDRAM - Mobile LPDDR4X Memory IC 4Gbit LVSTL_11 2.133 GHz 3.6 ns 200-TFBGA (10x14.5)
Documents
Technical documentation and resources
No documents available