W66CQ2 Series

Catalog

DRAM CHIP MOBILE LPDDR4X SDRAM 4GBIT 128MX32 1.1V/1.8V 200-PIN WFBGA

Part	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Package / Case	Memory Organization	Write Cycle Time - Word, Page	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Memory Type	Clock Frequency	Mounting Type	Technology	Memory Format	Access Time	Supplier Device Package [y]	Supplier Device Package [x]
Winbond Electronics W66CQ2NQUAGJ	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M	18 ns	200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	1866 MHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM
Winbond Electronics W66CQ2NQUAFJ TR	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M	18 ns	200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	1.6 GHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM
Winbond Electronics W66CQ2NQUAFJ	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M		200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	2.133 GHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM
Winbond Electronics W66CQ2NQUAGJ
Winbond Electronics W66CQ2NQUAHJ TR	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M	18 ns	200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	2.133 GHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM
Winbond Electronics W66CQ2NQQAHJ	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-TFBGA	128 M	18 ns	200-TFBGA	105 °C	-40 °C	Volatile	2.133 GHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM	3.6 ns	14.5	10
Winbond Electronics W66CQ2NQUAHJ	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M	18 ns	200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	2.133 GHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM
Winbond Electronics W66CQ2NQUAGJ TR	1.06 V, 1.7 V	1.17 V, 1.95 V	512 kb	200-WFBGA	128 M	18 ns	200-WFBGA (10x14.5)	105 °C	-40 °C	Volatile	1866 MHz	Surface Mount	SDRAM - Mobile LPDDR4X	DRAM