DMN4008LFG-13

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Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN4008LFG-13

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	3.3 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds	3537 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

40V N-Channel Enhancement Mode MOSFET

Part	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMN4008LFG-13	MOSFET (Metal Oxide)	N-Channel	3537 pF	40 V	POWERDI3333-8	74 nC	3 V	7.5 mOhm	8-PowerVDFN	1 W	20 V	Surface Mount	3.3 V	10 V	-55 °C	150 °C

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40V N-Channel Enhancement Mode MOSFET

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