Specification	UPA1950TE-T1-AT

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	2.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	1.8 V
Gate Charge (Max)	1.9 nC
Input Capacitance (Ciss) (Max)	220 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-95
Package Name	SC-95
Power - Max (Ta)	1.15 W
Rds On (Max)	130 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

UPA1950TE Series

Part	Channel Count	Configuration	Configuration - Features	Input Capacitance (Ciss) (Max)	FET Feature	FET Feature Drive Voltage	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package / Case	Vgs(th) (Max)	Mounting Type	Rds On (Max)	Operating Temperature	Gate Charge (Max)	Package Name	Power - Max (Ta)
Renesas Electronics Corporation UPA1950TE-T1-AT	2	P-Channel	Dual	220 pF	Logic Level Gate	1.8 V	MOSFET (Metal Oxide)	12 V	2.5 A	SC-95	1.5 V	Surface Mount	130 mOhm	150 °C	1.9 nC	SC-95	1.15 W

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