DZ950N36KHPSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 3.6KV 950A MODULE

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Obsolete

Infineon Technologies

DIODE GEN PURP 3.6KV 950A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	DZ950N36KHPSA1

Current - Average Rectified (Io)	950 A
Current - Reverse Leakage @ Vr	100 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Module
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	3600 V
Voltage - Forward (Vf) (Max) @ If	1.78 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Technology	Speed	Speed
Infineon Technologies DZ950N36KHPSA1	3600 V	Module	100 mA	150 °C	-40 °C	950 A	1.78 V	Chassis Mount	Module	Standard	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 3600 V 950A Chassis Mount Module

Technical documentation and resources