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DMP22M1UPSW-13

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Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP22M1UPSW-13

Active
Diodes Inc

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP22M1UPSW-13
Current - Continuous Drain (Id) @ 25°C60 A, 42 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]585 nC
Input Capacitance (Ciss) (Max) @ Vds12826 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]104 W
Rds On (Max) @ Id, Vgs1.9 mOhm
Supplier Device PackagePowerDI5060-8 (Type Q)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 1.16
5000$ 1.12

Description

General part information

DMP22M1UPSW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.

Documents

Technical documentation and resources