IDV05S60CXKSA1

Obsolete

Infineon Technologies

DIODE SIL CARB 600V 5A TO220FP

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Obsolete

Infineon Technologies

DIODE SIL CARB 600V 5A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	IDV05S60CXKSA1

Capacitance @ Vr, F	240 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	70 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2 Full Pack
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Speed	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Infineon Technologies IDV05S60CXKSA1	240 pF	70 µA	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	TO-220-2 Full Pack	No Recovery Time	5 A	PG-TO220-2 Full Pack	1.7 V	0 ns	600 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 5A Through Hole PG-TO220-2 Full Pack

Technical documentation and resources