IPZA65R029CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 29 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IPZA65R029CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 4PIN PACKAGE; 29 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPZA65R029CFD7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 69 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 145 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7149 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 305 W |
| Rds On (Max) @ Id, Vgs | 29 mOhm |
| Supplier Device Package | PG-TO247-4-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPZA65 Series
Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
Documents
Technical documentation and resources