IXTN110N20L2
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 100 A, 200 V, 0.024 OHM, 10 V, 4.5 V
IXTN110N20L2
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 100 A, 200 V, 0.024 OHM, 10 V, 4.5 V
Description
General part information
IXTN110N20L2 Series
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTN110N20L2 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 500 nC |
| Input Capacitance (Ciss) (Max) | 23000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227B |
| Power Dissipation (Max) | 735 W |
| Rds On (Max) | 24 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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