RN2301,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN2301,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	SC-70
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Package / Case	Grade	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Toshiba Semiconductor and Storage RN2301,LXHF	4700 Ohms	4.7 kOhms	SC-70	50 V	AEC-Q101	SC-70 SOT-323	Automotive	200 MHz	30	100 mW	100 mA	PNP - Pre-Biased	500 nA	Surface Mount	300 mV
Toshiba Semiconductor and Storage RN2301,LF	4700 Ohms	4.7 kOhms	SC-70	50 V		SC-70 SOT-323		200 MHz	30	100 mW	100 mA	PNP - Pre-Biased	500 nA	Surface Mount	300 mV

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General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical documentation and resources