
RN2301,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)

RN2301,LF
ActiveToshiba Semiconductor and Storage
BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)
Description
General part information
RN2301 Series
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70
Technical Specifications
Parameters and characteristics for this part
| Specification | RN2301,LF |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 500 nA |
| DC Current Gain (hFE) (Min) | 30 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Package Name | SC-70 |
| Power - Max | 100 mW |
| Resistor - Base (R1) Resistance | 4.7 kOhm |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Transistor Type | Pre-Biased, PNP |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Mini catalog Introduction to Toshiba Bias Resistor Built-in Transistors (Digital Transistors)
Electrical Characteristics of Bias Resistor Built-In Transistors (BRTs)
Basics of Bias Resistor Built-in Transistors (BRT)
RN2301 Data sheet/Japanese
Selection Guide Small Signal 2025 Rev1.0
Surface Mount Small Signal Transistor (BJT) Precautions for use
RN2301 Data sheet/English
Datasheet