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DF3A6.2LFU - TVS Diodes (ESD Protection Diodes), Unidirectional TVS Diode (ESD Protection Diode), SOT-323(USM)

RN2301,LF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)

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DF3A6.2LFU - TVS Diodes (ESD Protection Diodes), Unidirectional TVS Diode (ESD Protection Diode), SOT-323(USM)

RN2301,LF

Active
Toshiba Semiconductor and Storage

BIPOLAR TRANSISTORS, PNP BIAS RESISTOR BUILT-IN TRANSISTORS (BRT), 4.7 KΩ/4.7 KΩ, SOT-323(USM)

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Description

General part information

RN2301 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

Technical Specifications

Parameters and characteristics for this part

SpecificationRN2301,LF
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)30
Frequency - Transition200 MHz
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Package NameSC-70
Power - Max100 mW
Resistor - Base (R1) Resistance4.7 kOhm
Resistor - Emitter Base (R2)4.7 kOhms
Transistor TypePre-Biased, PNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

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