SUD80460E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 42A TO252AA

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 42A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SUD80460E-GE3

Current - Continuous Drain (Id) @ 25°C	42 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	560 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	65.2 W
Rds On (Max) @ Id, Vgs	44.7 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SUD80460E-BE3	42 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	560 pF	TO-252AA	4 V	20 V	Surface Mount	N-Channel	16 nC	10 V	-55 °C	175 ░C	150 V	65.2 W	44.7 mOhm
Vishay General Semiconductor - Diodes Division SUD80460E-GE3	42 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	560 pF	TO-252AA	4 V	20 V	Surface Mount	N-Channel	16 nC	10 V	-55 °C	175 ░C	150 V	65.2 W	44.7 mOhm

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General part information

N-Channel 150 V 42A (Tc) 65.2W (Tc) Surface Mount TO-252AA

Technical documentation and resources