TSM13ND50CI

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Taiwan Semiconductor Corporation

MOSFET N-CH 500V 13A ITO220

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Taiwan Semiconductor Corporation

MOSFET N-CH 500V 13A ITO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM13ND50CI

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	1877 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	57 W
Rds On (Max) @ Id, Vgs [Max]	480 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Rds On (Max) @ Id, Vgs [Max]	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Package / Case	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM13ND50CI	480 mOhm	MOSFET (Metal Oxide)	ITO-220	3.8 V	10 V	1877 pF	57 W	Through Hole	TO-220-3 Full Pack Isolated Tab	N-Channel	30 V	-55 °C	150 °C	500 V	13 A	39 nC

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General part information

N-Channel 500 V 13A (Tc) 57W (Tc) Through Hole ITO-220

Technical documentation and resources

No documents available