WNSC12650T6J

Obsolete

WeEn Semiconductors

DIODE SIL CARBIDE 650V 12A 5DFN

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Obsolete

WeEn Semiconductors

DIODE SIL CARBIDE 650V 12A 5DFN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 12A Surface Mount 5-DFN (8x8)

Technical documentation and resources

No documents available

Parameters and characteristics commom to parts in this series

Specification	WNSC12650T6J	WNSC1 Series

Capacitance @ Vr, F	328 pF	328 - 510 pF
Current - Average Rectified (Io)	12 A	10 - 12 A
Current - Average Rectified (Io) (per Diode)	-	16 A
Current - Reverse Leakage @ Vr	60 µA	50 - 110 µA
Diode Configuration	-	1 Pair Common Cathode
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature - Junction	175 °C	175 °C
Operating Temperature - Junction	-	175 °C
Package / Case	4-VSFN Exposed Pad	TO-247-2, TO-247-3, 4-VSFN Exposed Pad, TO-220-2
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	5-DFN (8x8)	TO-247-2, TO-247-3, 5-DFN (8x8), TO-220AC
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	1.2 - 650 V
Voltage - Forward (Vf) (Max) @ If	-	1.6 - 1.7 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V	1.8 V

DIODE SIL CARB 650V 10A TO247-2

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed	Package / Case	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]
WeEn Semiconductors WNSC10650WQ	TO-247-2	1.7 V	328 pF	650 V	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C
WeEn Semiconductors WNSC16650CWQ	TO-247-3	1.7 V		650 V	Through Hole		SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	50 µA	175 °C	1 Pair Common Cathode	16 A
WeEn Semiconductors WNSC12650T6J	5-DFN (8x8)		328 pF	650 V	Surface Mount	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	4-VSFN Exposed Pad	60 µA	175 °C			1.8 V
WeEn Semiconductors WNSC101200Q	TO-220AC	1.6 V	510 pF	1.2 kV	Through Hole	10 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-220-2	110 µA					175 °C
WeEn Semiconductors WNSC12650WQ	TO-247-2		328 pF	650 V	Through Hole	12 A	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	60 µA	175 °C