M24C08-WBN6

Obsolete

STMicroelectronics

IC EEPROM 8KBIT I2C 400KHZ 8DIP

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M24C08-WBN6

Obsolete

STMicroelectronics

IC EEPROM 8KBIT I2C 400KHZ 8DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	M24C08-WBN6

Access Time	900 ns
Clock Frequency	400 kHz
Memory Format	EEPROM
Memory Interface	I2C
Memory Organization	1K x 8
Memory Size	8 Kbit
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Supplier Device Package	8-PDIP
Technology	EEPROM
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	2.5 V
Write Cycle Time - Word, Page	5 ms

M24C08-DRE Series

8-Kbit serial I2C bus EEPROM 105°C operation

Part	Memory Format	Memory Organization	Operating Temperature [Min]	Operating Temperature [Max]	Memory Size	Memory Type	Write Cycle Time - Word, Page	Memory Interface	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Access Time	Technology	Package / Case	Clock Frequency	Mounting Type	Package / Case [y]	Package / Case [x]	Qualification	Grade	Package / Case [custom]	Package / Case [custom]	Package / Case	Package / Case
STMicroelectronics M24C08-FMB5TG	EEPROM	1K x 8	-20 °C	85 C	8 Kbit	Non-Volatile	5 ms	I2C	8-UFDFPN (2x3)	5.5 V	1.7 V	900 ns	EEPROM	8-UFDFN Exposed Pad	400 kHz	Surface Mount
STMicroelectronics M24C08-WMN6T	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-SOIC	5.5 V	2.5 V	900 ns	EEPROM	8-SOIC	400 kHz	Surface Mount	3.9 mm	0.154 in
STMicroelectronics M24C08-RMN6P	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-SOIC	5.5 V	1.8 V	900 ns	EEPROM	8-SOIC	400 kHz	Surface Mount	3.9 mm	0.154 in
STMicroelectronics M24C08-DRMN8TP/K	EEPROM	1K x 8	-40 °C	105 °C	8 Kbit	Non-Volatile	4 ms	I2C	8-SOIC	5.5 V	1.8 V	450 ns	EEPROM	8-SOIC		Surface Mount	3.9 mm	0.154 in	AEC-Q100	Automotive
STMicroelectronics M24C08-WMN6P	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-SOIC	5.5 V	2.5 V	900 ns	EEPROM	8-SOIC	400 kHz	Surface Mount	3.9 mm	0.154 in
STMicroelectronics M24C08-RDW6TP	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-TSSOP	5.5 V	1.8 V	900 ns	EEPROM	8-TSSOP	400 kHz	Surface Mount					0.173 "	4.4 mm
STMicroelectronics M24C08-RMN6TP	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-SOIC	5.5 V	1.8 V	900 ns	EEPROM	8-SOIC	400 kHz	Surface Mount	3.9 mm	0.154 in
STMicroelectronics M24C08-WMN6	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-SOIC	5.5 V	2.5 V	900 ns	EEPROM	8-SOIC	400 kHz	Surface Mount	3.9 mm	0.154 in
STMicroelectronics M24C08-RDS6TG	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-MSOP	5.5 V	1.8 V	900 ns	EEPROM	8-MSOP 8-TSSOP	400 kHz	Surface Mount					0.118 in		3 mm
STMicroelectronics M24C08-WBN6	EEPROM	1K x 8	-40 °C	85 °C	8 Kbit	Non-Volatile	5 ms	I2C	8-PDIP	5.5 V	2.5 V	900 ns	EEPROM	8-DIP	400 kHz	Through Hole							0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

M24C08-DRE Series

The M24C08-DRE is a 8-Kbit serial EEPROM device operating up to 105 °C. The M24C08-DRE is compliant with the level of reliability defined by the AEC-Q100 grade 2.

The device is accessed by a simple serial I2C compatible interface running up to 1 MHz.

The memory array is based on advanced true EEPROM technology (electrically erasable programmable memory). The M24C08-DRE is a byte-alterable memory (1024 × 8 bits) organized as 64 pages of 16 bytes in which the data integrity is significantly improved with an embedded Error Correction Code logic.

Documents

Technical documentation and resources