IXFX64N50P

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IXYS

MOSFET N-CH 500V 64A PLUS247-3

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IXYS

MOSFET N-CH 500V 64A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX64N50P

Current - Continuous Drain (Id) @ 25°C	64 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	8700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	830 W
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
IXYS IXFX64N50P	500 V	Through Hole	830 W	64 A	30 V	MOSFET (Metal Oxide)	5.5 V	10 V	150 nC	-55 °C	150 °C	TO-247-3 Variant	N-Channel	PLUS247™-3	8700 pF
IXYS IXFX64N50Q3	500 V	Through Hole	1000 W	64 A	30 V	MOSFET (Metal Oxide)	6.5 V	10 V		-55 °C	150 °C	TO-247-3 Variant	N-Channel	PLUS247™-3		6950 pF	145 nC
IXYS IXFX64N60Q3	600 V	Through Hole		64 A	30 V	MOSFET (Metal Oxide)	6.5 V	10 V		-55 °C	150 °C	TO-247-3 Variant	N-Channel	PLUS247™-3	9930 pF		190 nC	1250 W	95 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 64A (Tc) 830W (Tc) Through Hole PLUS247™-3

Technical documentation and resources