STP4NK50ZD

Obsolete

STMicroelectronics

MOSFET N-CH 500V 3A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP4NK50ZD

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	2.7 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
STMicroelectronics STP4NK50ZD	3 A	TO-220-3	2.7 Ohm	TO-220	MOSFET (Metal Oxide)	30 V	45 W	10 V	4.5 V	12 nC	310 pF	500 V	Through Hole	-55 °C	150 °C	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 3A (Tc) 45W (Tc) Through Hole TO-220

Technical documentation and resources