IXFK170N10

IXYS

MOSFET N-CH 100V 170A TO-264AA

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IXYS

MOSFET N-CH 100V 170A TO-264AA

Technical Specifications

Parameters and characteristics for this part

Specification	IXFK170N10

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	515 nC
Input Capacitance (Ciss) (Max) @ Vds	10300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs [Max]	10 mOhm
Supplier Device Package	TO-264AA (IXFK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds
IXYS IXFK170N10	-55 °C	150 °C	10 mOhm	515 nC	4 V	20 V	100 V	560 W	MOSFET (Metal Oxide)	TO-264-3 TO-264AA	10 V	Through Hole	TO-264AA (IXFK)	N-Channel	10300 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 19.88

General part information

N-Channel 100 V 170A (Tc) 560W (Tc) Through Hole TO-264AA (IXFK)

Technical documentation and resources

No documents available