DMN61D9UW-13

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package PDF +1

DMN61D9UW-13

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

DocumentsDatasheet Package PDF +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN61D9UW-13

Current - Continuous Drain (Id) @ 25°C	340 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	1.8 V, 5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.4 nC
Input Capacitance (Ciss) (Max) @ Vds	28.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	320 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

DMN61D8LVTQ Series

Integrated Relay and Inductive Load Driver

Part	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Configuration	FET Feature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Qualification	Grade
Diodes Inc DMN61D9U-13	MOSFET (Metal Oxide)	60 V	1.8 V 5 V	N-Channel	1 V	0.4 nC	Surface Mount	2 Ohm	28.5 pF	SC-59 SOT-23-3 TO-236-3	380 mA	20 V	SOT-23-3	-55 °C	150 °C
Diodes Inc DMN61D9UT-7	MOSFET (Metal Oxide)	60 V	1.8 V 5 V	N-Channel	1 V	0.4 nC	Surface Mount	2 Ohm	28.5 pF	SOT-523	350 mA	20 V	SOT-523	-55 °C	150 °C	260 mW
Diodes Inc DMN61D8LVTQ-7	MOSFET (Metal Oxide)	60 V			2 V		Surface Mount	1.8 Ohm	12.9 pF	SOT-23-6 Thin TSOT-23-6	630 mA			-55 °C	150 °C		2 N-Channel (Dual)	Logic Level Gate	820 mW	0.74 nC
Diodes Inc DMN61D9UDW-13	MOSFET (Metal Oxide)	60 V			1 V		Surface Mount	2 Ohm	28.5 pF	6-TSSOP SC-88 SOT-363	350 mA		SOT-363	-55 °C	150 °C		2 N-Channel (Dual)		320 mW	0.4 nC
Diodes Inc DMN61D8L-13	MOSFET (Metal Oxide)	60 V	3 V 5 V	N-Channel	2 V	0.74 nC	Surface Mount	1.8 Ohm	12.9 pF	SC-59 SOT-23-3 TO-236-3	470 mA	12 V	SOT-23-3	-55 °C	150 °C	390 mW
Diodes Inc DMN61D9UDW-7	MOSFET (Metal Oxide)	60 V			1 V		Surface Mount	2 Ohm	28.5 pF	6-TSSOP SC-88 SOT-363	350 mA		SOT-363	-55 °C	150 °C		2 N-Channel (Dual)		320 mW	0.4 nC
Diodes Inc DMN61D9UW-13	MOSFET (Metal Oxide)	60 V	1.8 V 5 V	N-Channel	1 V	0.4 nC	Surface Mount	2 Ohm	28.5 pF	SC-70 SOT-323	340 mA	20 V	SOT-323	-55 °C	150 °C	320 mW
Diodes Inc DMN61D9UWQ-13	MOSFET (Metal Oxide)	60 V	1.8 V 5 V	N-Channel	1 V	0.4 nC	Surface Mount	2 Ohm	28.5 pF	SC-70 SOT-323	400 mA	20 V	SOT-323	-55 °C	150 °C						440 mW	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMN61D8LVTQ Series

The DMN61D8LVTQ provides a single component solution for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications, without the need of a freewheeling diode. DMN61D8LVTQ accepts logic level inputs, thus allowing it to be driven by logic gates, inverters and microcontrollers. It is ideally suited for door, window and antenna relay coils.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document