ISC0603NLSATMA1

Obsolete

Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISC0603NLS IN THE SUPERSO8 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

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ISC0603NLSATMA1

Obsolete

Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISC0603NLS IN THE SUPERSO8 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ISC0603NLSATMA1

Current - Continuous Drain (Id) @ 25°C	12.3 A, 56 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 52 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	PG-TDSON-8-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

ISC0603N Series

Part	Technology	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies ISC0603NLSATMA1	MOSFET (Metal Oxide)	2.5 W 52 W	8-PowerTDFN	8.9 mOhm	20 V	24 nC	PG-TDSON-8-6	80 V	Surface Mount	N-Channel	4.5 V 10 V	1600 pF	12.3 A 56 A	2.3 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ISC0603N Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISC0603NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.

Documents

Technical documentation and resources