VN0300L

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ON Semiconductor

MOSFET N-CH 60V 200MA TO92-3

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ON Semiconductor

MOSFET N-CH 60V 200MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	VN0300L

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	100 pF
Mounting Type	Through Hole
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power Dissipation (Max) [Max]	350 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

MOSFET N-CH 60V 200MA TO92-3

Part	Technology	Package / Case	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
ON Semiconductor VN0300L	MOSFET (Metal Oxide)	Formed Leads, TO-226-3, TO-92-3 Long Body	2.5 V	200 mA	350 mW	TO-92	TO-226	60 V	N-Channel	20 V	Through Hole	100 pF	10 V	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 200mA (Ta) 350mW (Tc) Through Hole TO-92 (TO-226)

Technical documentation and resources