IRLL2705TRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 3.8 A, 0.04 OHM, SOT-223, SURFACE MOUNT

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IRLL2705TRPBF

Active

Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 3.8 A, 0.04 OHM, SOT-223, SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRLL2705TRPBF

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IRLL2705 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Vgs(th) (Max) @ Id
Infineon Technologies IRLL2705TRPBF	-55 °C	150 °C	55 V	870 pF	SOT-223	Surface Mount	N-Channel	3.8 A	16 V	48 nC	40 mOhm	TO-261-4 TO-261AA	1 W	4 V	10 V	MOSFET (Metal Oxide)	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.38
		10	$ 0.87
		100	$ 0.58
		500	$ 0.45
		1000	$ 0.41
	Digi-Reel®	1	$ 1.38
		10	$ 0.87
		100	$ 0.58
		500	$ 0.45
		1000	$ 0.41
	Tape & Reel (TR)	2500	$ 0.37
		5000	$ 0.34
		7500	$ 0.33
		12500	$ 0.33
Newark	Each (Supplied on Cut Tape)	1	$ 1.27
		10	$ 0.90
		25	$ 0.82
		50	$ 0.74
		100	$ 0.67
		250	$ 0.63
		500	$ 0.59
		1000	$ 0.53

Description

General part information

IRLL2705 Series

The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.

Documents

Technical documentation and resources