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STGD6M65DF2 - MFG_DPAK(TO252-3)

STGD6M65DF2

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STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 6 A LOW LOSS

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STGD6M65DF2 - MFG_DPAK(TO252-3)

STGD6M65DF2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 6 A LOW LOSS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGD6M65DF2
Current - Collector (Ic) (Max) [Max]12 A
Gate Charge21.2 nC
IGBT TypeTrench Field Stop
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]88 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageDPAK
Switching Energy36 µJ, 200 µJ
Td (on/off) @ 25°C15 ns, 90 ns
Test Condition22 Ohm, 6 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.29
10$ 1.06
100$ 0.82
500$ 0.70
1000$ 0.57
Digi-Reel® 1$ 1.29
10$ 1.06
100$ 0.82
500$ 0.70
1000$ 0.57
Tape & Reel (TR) 2500$ 0.54
5000$ 0.51
12500$ 0.49

Description

General part information

STGD6M65DF2 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.