STFV4N150

Obsolete

STMicroelectronics

MOSFET N-CH 1500V 4A TO220

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Obsolete

STMicroelectronics

MOSFET N-CH 1500V 4A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	STFV4N150

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	1500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	7 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Vgs (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
STMicroelectronics STFV4N150	TO-220-3 Full Pack Isolated Tab	30 V	150 °C	1500 V	MOSFET (Metal Oxide)	1300 pF	10 V	50 nC	TO-220	N-Channel	7 Ohm	40 W	Through Hole	4 A	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1500 V 4A (Tc) 40W (Tc) Through Hole TO-220

Technical documentation and resources