TQM150NB04CR RLG

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Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 41A, PDFN56 ROHS COMPLIANT: YES

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Active

Taiwan Semiconductor Corporation

MOSFET, N-CH, 40V, 41A, PDFN56 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	TQM150NB04CR RLG

Current - Continuous Drain (Id) @ 25°C	10 A, 41 A
Drain to Source Voltage (Vdss)	40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1044 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W, 56 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	15 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Grade	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [x]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Power Dissipation (Max)	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Technology
Taiwan Semiconductor Corporation TQM150NB04CR RLG	Surface Mount Wettable Flank	15 mOhm	10 A 41 A	Automotive	N-Channel	20 V	20 nC	-55 °C	175 ░C	40 V	3.8 V	8-PowerTDFN	8-PDFNU (5x6)	3.1 W 56 W	AEC-Q101	1044 pF	MOSFET (Metal Oxide)

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General part information

N-Channel 40 V 10A (Ta), 41A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount, Wettable Flank 8-PDFNU (5x6)

Technical documentation and resources