IRF9520NPBF
ObsoleteIR MOSFET™ P-CHANNEL ; TO-220 PACKAGE; 480 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IRF9520NPBF
ObsoleteIR MOSFET™ P-CHANNEL ; TO-220 PACKAGE; 480 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF9520NPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6.8 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 350 pF |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 480 mOhm |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRF9520 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources