Specification	SI7882DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	13 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	30 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	1.9 W
Rds On (Max)	5.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.4 V

SI7882 Series

Part	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Rds On (Max)	FET Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	Package Name	Vgs (Max)
Vishay Dale SI7882DP-T1-GE3	PowerPAK® SO-8	1.9 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 nC	5.5 mOhm	N-Channel	2.5 V	4.5 V	Surface Mount	1.4 V	12 V	13 A	PowerPAK® SO-8	8 V
Vishay Dale SI7882DP-T1-E3	PowerPAK® SO-8	1.9 W	-55 °C	150 °C	MOSFET (Metal Oxide)	30 nC	5.5 mOhm	N-Channel	2.5 V	4.5 V	Surface Mount	1.4 V	12 V	13 A	PowerPAK® SO-8	8 V

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