STGW15H120F2

Obsolete

STMicroelectronics

IGBT TRENCH FS 1200V 30A TO-247

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STGW15H120F2

Obsolete

STMicroelectronics

IGBT TRENCH FS 1200V 30A TO-247

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGW15H120F2

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	67 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	259 W
Supplier Device Package	TO-247-3
Switching Energy	380 µJ, 370 µJ
Test Condition	600 V, 15 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

STGW15M120DF3 Series

Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

Part	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Test Condition	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gate Charge	IGBT Type	Power - Max [Max]	Reverse Recovery Time (trr)	Vce(on) (Max) @ Vge, Ic	Switching Energy
STMicroelectronics STGW15M120DF3	26 ns 122 ns	30 A	Through Hole	-55 °C	175 ░C	TO-247-3	15 V 15 A 22 Ohm 600 V	60 A	1200 V	TO-247	226 nC	Trench Field Stop	259 W	270 ns	2.3 V
STMicroelectronics STGW15H120F2		30 A	Through Hole	-55 °C	175 ░C	TO-247-3	10 Ohm 15 A 15 V 600 V	60 A	1200 V	TO-247-3	67 nC	Trench Field Stop	259 W		2.6 V	370 µJ 380 µJ

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGW15M120DF3 Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources