IKW50N60TFKSA1

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Infineon Technologies

600 V, 40 A HARD SWITCHING TRENCHSTOP™ IGBT3 DISCRETE COPACKED WITH A FAST RECOVERY ANTI PARALLEL DIODE IN A TO-247 PACKAGE. IT IMPRESSES WITH LOW EMI EMISSIONS AND LOW SWITCHING LOSSES - PERFECT FOR YOUR WELDING APPLICATIONS, UPS SOLAR SYSTEMS, HOME APPLIANCES, AIR CONDITIONING AND DRIVES.

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IKW50N60TFKSA1

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKW50N60TFKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	310 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	333 W
Reverse Recovery Time (trr)	143 ns
Supplier Device Package	PG-TO247-3-1
Switching Energy	2.6 mJ
Td (on/off) @ 25°C	299 ns, 26 ns
Test Condition	50 A, 15 V, 400 V, 7 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

IKW50N60 Series

Part	Power - Max [Max]	Switching Energy	Supplier Device Package	IGBT Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Test Condition	Current - Collector Pulsed (Icm)	Mounting Type	Gate Charge
Infineon Technologies IKW50N60TFKSA1	333 W	2.6 mJ	PG-TO247-3-1	Trench Field Stop	TO-247-3	600 V	2 V	80 A	-40 C	175 °C	26 ns 299 ns	143 ns	7 Ohm 15 V 50 A 400 V	150 A	Through Hole	310 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.96
		30	$ 4.62
		120	$ 3.88
		510	$ 3.38
Newark	Each	1	$ 6.70
		10	$ 6.38
		25	$ 3.83
		50	$ 3.66
		100	$ 3.49
		480	$ 3.46
		720	$ 3.33

Description

General part information

IKW50N60 Series

Hard-switching 600 V, 50 ATRENCHSTOP™ IGBT3copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Documents

Technical documentation and resources