ZVN0124A

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Search across all available documentation for this part.

Active

Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Technical Specifications

Parameters and characteristics for this part

Specification	ZVN0124A

Current - Continuous Drain (Id) @ 25°C	160 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	16 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

N-Channel Enhancement Mode Vertical DMOS FET

Part	FET Type	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Package / Case	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Diodes Inc ZVN0124A	N-Channel	3 V	MOSFET (Metal Oxide)	700 mW	TO-226-3 TO-92-3	TO-92	20 V	160 mA	-55 °C	150 °C	240 V	Through Hole	10 V	16 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources