Specification	SIHU4N80E-GE3

Current - Continuous Drain (Id) (Tc)	4.3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	622 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	IPAK, TO-251AB, TO-251-3 Long Leads
Package Name	IPAK (TO-251)
Power Dissipation (Max)	69 W
Rds On (Max)	1.27 Ohm, 1.27 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHU4 Series

Part	Gate Charge (Max)	Technology	Vgs(th) (Max)	Package / Case	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Package Name	Rds On (Max)
Vishay Dale SIHU4N80AE-GE3	32 nC	MOSFET (Metal Oxide)	4 V	IPAK TO-251-3 Long Leads TO-251AB	30 V	-55 °C	150 °C	10 V	Through Hole	69 W	N-Channel	800 V	4.3 A	622 pF	IPAK (TO-251)	1.27 Ohm 1.27 Ohm
Vishay Dale SIHU4N80E-GE3	32 nC	MOSFET (Metal Oxide)	4 V	IPAK TO-251-3 Long Leads TO-251AB	30 V	-55 °C	150 °C	10 V	Through Hole	69 W	N-Channel	800 V	4.3 A	622 pF	IPAK (TO-251)	1.27 Ohm 1.27 Ohm

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