1N3208R

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 15A DO5

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

DIODE GEN PURP REV 50V 15A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N3208R

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	15 A, 1.5 V

DIODE GEN PURP REV 50V 15A DO5

Part	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor 1N3208R	Standard Recovery >500ns	200 mA	50 V	1.5 V, 15 A	DO-5	DO-203AB, DO-5, Stud	Reverse Polarity, Standard	175 ░C	-65 C	15 A	Chassis, Stud Mount	10 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 50 V 15A Chassis, Stud Mount DO-5

Technical documentation and resources