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IPT012N08N5ATMA1 - x-xSOF-8-1

IPT012N08N5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.2 MOHM;

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IPT012N08N5ATMA1 - x-xSOF-8-1

IPT012N08N5ATMA1

Active
Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.2 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPT012N08N5ATMA1
Current - Continuous Drain (Id) @ 25°C300 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]223 nC
Input Capacitance (Ciss) (Max) @ Vds17000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerSFN
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device PackagePG-HSOF-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 2000$ 3.52
DigikeyCut Tape (CT) 1$ 7.55
10$ 5.13
100$ 3.75
500$ 3.28
Digi-Reel® 1$ 7.55
10$ 5.13
100$ 3.75
500$ 3.28
Tape & Reel (TR) 2000$ 3.28
NewarkEach (Supplied on Full Reel) 2000$ 3.41

Description

General part information

IPT012 Series

Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applications such as rack or blade servers.

Documents

Technical documentation and resources