SCTH90N65G2V-7
ActiveSILICON CARBIDE POWER MOSFET 650 V, 116 A, 18 MOHM (TYP., TJ = 25 °C) IN AN H2PAK-7 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
SCTH90N65G2V-7
ActiveSILICON CARBIDE POWER MOSFET 650 V, 116 A, 18 MOHM (TYP., TJ = 25 °C) IN AN H2PAK-7 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SCTH90N65G2V-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 157 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (7 Leads + Tab), TO-263-8, TO-263CA |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) @ Id, Vgs | 26 mOhm |
| Supplier Device Package | H2PAK-7 |
| Vgs (Max) [Max] | 22 V |
| Vgs (Max) [Min] | -10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCTH90N65G2V-7 Series
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Documents
Technical documentation and resources