Specification	SISA40DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	43.7 A
Current - Continuous Drain (Id) (Tc)	162 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	53 nC
Input Capacitance (Ciss) (Max)	3415 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	1.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	12 V
Vgs(th) (Max)	1.5 V

SISA40 Series

Part	FET Type	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Vgs (Max) Negative	Vgs (Max) Positive	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package Name	Vgs(th) (Max)
Vishay Dale SISA40DN-T1-GE3	N-Channel	PowerPAK® 1212-8	10 V	2.5 V	162 A	43.7 A	3415 pF	53 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	-8 V	12 V	Surface Mount	3.7 W 52 W	20 V	1.1 mOhm	PowerPAK® 1212-8	1.5 V

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