C3D10065E

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Wolfspeed

DIODE SIL CARB 650V 32A TO252-2

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Wolfspeed

DIODE SIL CARB 650V 32A TO252-2

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	C3D10065E	C3D10065 Series

Capacitance @ Vr, F	460.5 pF	460.5 - 480 pF
Current - Average Rectified (Io)	32 A	19 - 32 A
Current - Reverse Leakage @ Vr	50 µA	50 - 60 µA
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3	TO-220-2, TO-220-2 Isolated Tab, SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	TO-252-2	TO-220-2, TO-220-2 Isolated Tab, TO-252-2
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V	1.8 V

DIODE SCHOTTKY SIC 650V 30A 2-PIN(2+TAB) TO-220 TUBE

Part	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
Wolfspeed C3D10065A	TO-220-2	30 A	480 pF	TO-220-2	No Recovery Time	175 ░C	-55 C	Through Hole	SiC (Silicon Carbide) Schottky	60 µA	1.8 V	650 V
Wolfspeed C3D10065I	TO-220-2 Isolated Tab	19 A	480 pF	TO-220-2 Isolated Tab	No Recovery Time	175 ░C	-55 C	Through Hole	SiC (Silicon Carbide) Schottky	50 µA		650 V
Wolfspeed C3D10065E	DPAK (2 Leads + Tab), SC-63, TO-252-3	32 A	460.5 pF	TO-252-2	No Recovery Time	175 ░C	-55 C	Surface Mount	SiC (Silicon Carbide) Schottky	50 µA	1.8 V	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 32A Surface Mount TO-252-2

Technical documentation and resources