AUIRFR5305TR

Obsolete

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET P-CH 55V 31A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFR5305TR

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	55 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	FET Type
Infineon Technologies AUIRFR5305	55 V	TO-252AA (DPAK)	Surface Mount	-55 °C	175 ░C	4 V	1200 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 nC	20 V	10 V	31 A	MOSFET (Metal Oxide)	65 mOhm	110 W	P-Channel
Infineon Technologies AUIRFR5305TR	55 V	TO-252AA (DPAK)	Surface Mount			4 V	1200 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	63 nC			31 A	MOSFET (Metal Oxide)	65 mOhm		P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 55 V 31A (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources