TK19A45D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 19A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 450V 19A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK19A45D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage TK19A45D(STA4,Q,M)	150 °C	45 nC	Through Hole	TO-220SIS	MOSFET (Metal Oxide)	10 V	250 mOhm	19 A	N-Channel	TO-220-3 Full Pack	30 V	50 W	450 V	2600 pF

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General part information

N-Channel 450 V 19A (Ta) 50W (Tc) Through Hole TO-220SIS

Technical documentation and resources