DMP6185SE-13

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 60V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Technical Specifications

Parameters and characteristics for this part

Specification	DMP6185SE-13

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	708 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	150 mOhm
Supplier Device Package	SOT-223-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

P-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Grade	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs	Qualification	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id
Diodes Inc DMP6185SE-13	20 V	4.5 V 10 V	SOT-223-3	708 pF	3 A	Automotive	60 V	MOSFET (Metal Oxide)	150 mOhm	P-Channel	14 nC	AEC-Q101	Surface Mount	-55 °C	150 °C	1.2 W	TO-261-4 TO-261AA	3 V
Diodes Inc DMP6185SE-7	20 V	4.5 V 10 V	SOT-223-3	708 pF	3 A	Automotive	60 V	MOSFET (Metal Oxide)	150 mOhm	P-Channel	14 nC	AEC-Q101	Surface Mount	-55 °C	150 °C	1.2 W	TO-261-4 TO-261AA	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources