Zenode.ai Logo
SCT20N120

SCT20N120

Obsolete
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE

Find alt
SCT20N120

SCT20N120

Obsolete
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 20 A, 189 MOHM (TYP., TJ = 150 C) IN AN HIP247 PACKAGE

Find alt

Description

General part information

SCT20N120 Series

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT20N120
Current - Continuous Drain (Id) (Tc)20 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)20 V
FET TypeN-Channel
Gate Charge (Max)45 nC
Input Capacitance (Ciss) (Max)650 pF
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameHiP247™
Power Dissipation (Max)175 W
Rds On (Max)290 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive25 V
Vgs(th) (Max)3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

Sign up — freeLog in

CAD

3D models and CAD resources for this part