SIGC121T60NR2CX1SA2

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT 3 CHIP 600V WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIGC121T60NR2CX1SA2

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	450 A
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Die
Supplier Device Package	Die
Td (on/off) @ 25°C	225 ns
Td (on/off) @ 25°C	125 ns
Test Condition	150 A, 300 V, 15 V, 1.5 Ohm
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Pulsed (Icm)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Test Condition	IGBT Type	Supplier Device Package
Infineon Technologies SIGC121T60NR2CX1SA3	600 V	225 ns	125 ns	2.5 V	Die	450 A	Surface Mount	-55 °C	150 °C	150 A	1.5 Ohm 15 V 150 A 300 V	NPT	Die
Infineon Technologies SIGC121T60NR2CX1SA2	600 V	225 ns	125 ns	2.5 V	Die	450 A	Surface Mount	-55 °C	150 °C	150 A	1.5 Ohm 15 V 150 A 300 V	NPT	Die
Infineon Technologies SIGC121T60NR2CX7SA1	600 V	225 ns	125 ns	2.5 V	Die	450 A	Surface Mount	-55 °C	150 °C	150 A	1.5 Ohm 15 V 150 A 300 V	NPT	Die

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 600 V 150 A Surface Mount Die

Technical documentation and resources