ZTX649

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Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 25 V, 2 A, 1 W, E-LINE, THROUGH HOLE

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Active

Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 25 V, 2 A, 1 W, E-LINE, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX649

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	240 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Frequency - Transition	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Transistor Type
Diodes Inc ZTX649STOB	240 MHz	1 W	100 nA	Through Hole	500 mV	E-Line (TO-92 compatible)	2 A	-55 °C	200 C	25 V	100	E-Line-3 Formed Leads	NPN
Diodes Inc ZTX649	240 MHz	1 W	100 nA	Through Hole	500 mV	E-Line (TO-92 compatible)	2 A	-55 °C	200 C	25 V	100	E-Line-3	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 25 V 2 A 240MHz 1 W Through Hole E-Line (TO-92 compatible)