IRF6643TRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 35 A, 0.0345 OHM, DIRECTFET MZ, SURFACE MOUNT

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IRF6643TRPBF

Active

Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 35 A, 0.0345 OHM, DIRECTFET MZ, SURFACE MOUNT

Deep-Dive with AI

DocumentsIR Part Numbering System EOL Notices EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6643TRPBF

Current - Continuous Drain (Id) @ 25°C	35 A, 6.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MZ
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	34.5 mOhm
Supplier Device Package	DIRECTFET™ MZ
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.9 V

IRF6643 Series

Part	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Power Dissipation (Max)	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF6643TRPBF	20 V	4.9 V	MOSFET (Metal Oxide)	150 °C	-40 °C	DirectFET™ Isometric MZ	2.8 W 89 W	N-Channel	Surface Mount	150 V	6.2 A 35 A	55 nC	2340 pF	DIRECTFET™ MZ	10 V	34.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.79
		10	$ 1.81
		100	$ 1.25
		500	$ 1.00
		1000	$ 0.93
		2000	$ 0.86
	Digi-Reel®	1	$ 2.79
		10	$ 1.81
		100	$ 1.25
		500	$ 1.00
		1000	$ 0.93
		2000	$ 0.86
	Tape & Reel (TR)	4800	$ 0.86
Newark	Each (Supplied on Full Reel)	4800	$ 1.06

Description

General part information

IRF6643 Series

IRF6643TRPBF is a digital audio MOSFET specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.

Documents

Technical documentation and resources

IR Part Numbering System

EOL Notices EN

Datasheet

Technical Data Sheet EN

Datasheet