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STD6N95K5 - MFG_DPAK(TO252-3)

STD6N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

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DocumentsDatasheetDatasheet+18
STD6N95K5 - MFG_DPAK(TO252-3)

STD6N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 1 OHM TYP., 9 A MDMESH K5 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD6N95K5
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]450 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)90 W
Rds On (Max) @ Id, Vgs1.25 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.68
10$ 2.25
100$ 1.82
500$ 1.62
1000$ 1.38
Digi-Reel® 1$ 2.68
10$ 2.25
100$ 1.82
500$ 1.62
1000$ 1.38
Tape & Reel (TR) 2500$ 1.30
5000$ 1.25

Description

General part information

STD6N95K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.