STU4N80K5

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STMicroelectronics

TRANS MOSFET N-CH 800V 3A 3-PIN IPAK TUBE

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STU4N80K5

Active

STMicroelectronics

TRANS MOSFET N-CH 800V 3A 3-PIN IPAK TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STU4N80K5

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STU4N80 Series

TRANS MOSFET N-CH 800V 3A 3-PIN IPAK TUBE

Part	Supplier Device Package	Technology	Package / Case	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STU4N80K5	TO-251 (IPAK)	MOSFET (Metal Oxide)	IPAK, TO-251-3 Short Leads, TO-251AA	N-Channel	Through Hole	-55 °C	150 °C	800 V	175 pF	10.5 nC	10 V	2.5 Ohm	5 V	60 W	30 V	3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	75	$ 1.26
		150	$ 1.04
		375	$ 1.01
		525	$ 0.88
		1875	$ 0.75
		3750	$ 0.71
		7500	$ 0.68

Description

General part information

STU4N80 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.Industry’s lowest RDS(on)x areaIndustry’s best figure of merit (FoM)Ultra low gate charge100% avalanche testedZener-protected

Documents

Technical documentation and resources