STU4N80K5
ActiveTRANS MOSFET N-CH 800V 3A 3-PIN IPAK TUBE
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STU4N80K5
ActiveTRANS MOSFET N-CH 800V 3A 3-PIN IPAK TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STU4N80K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm |
| Supplier Device Package | TO-251 (IPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 75 | $ 1.26 | |
| 150 | $ 1.04 | |||
| 375 | $ 1.01 | |||
| 525 | $ 0.88 | |||
| 1875 | $ 0.75 | |||
| 3750 | $ 0.71 | |||
| 7500 | $ 0.68 | |||
Description
General part information
STU4N80 Series
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.Industry’s lowest RDS(on)x areaIndustry’s best figure of merit (FoM)Ultra low gate charge100% avalanche testedZener-protected
Documents
Technical documentation and resources